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| Not Recommended for New Designs. Product Data Sheet March 19, 2001 TriQuint Recommends the TGA2503-EPU be used for New Designs. 13.75 - 15 GHz 2 Watt Power Amplifier Key Features * * * * * * TGA1152-SCC 0.5 um pHEMT Technology 34 dB Nominal Gain 33 dBm Nominal Pout @ Pin = 3 dBm OTOI 39dBm Typical Bias 7V @ 682 mA Chip Dimensions 1.390mm x 2.495mm Primary Applications * Ku Band Sat-Com Point-to-Point Radio 30 Product Description The TriQuint TGA1152-SCC MMIC is a 34dB gain, 2W, 13.75 - 15 GHz HPA, which is ideally suited for current KuBand satellite ground terminal applications. Utilizing TriQuint's robust 0.5um power pHEMT process coupled with the latest High Density Interconnect (HDI) technology. The TGA1152-SCC provides the high power transmit function in an extremely compact (< 3.5mm2) chip footprint. The combination of a high-yield process, electrical performance, and compact die size is exactly what is required to support the aggressive pricing targets required for low-cost transmit modules. Each device is 100% DC and RF tested on -wafer to ensure performance compliance. The device is available in chip form. 40 35 30 25 20 S21 (dB) 15 10 5 0 -5 -10 -15 -20 10 * S21 S21 S11 S22 25 20 15 5 0 -5 S11, S22 (dB) 10 S11 S22 11 12 13 14 15 16 17 18 19 20 -10 -15 -20 -25 -30 Frequency (GHz) 34.5 34 33.5 33 Power (dBm) 32.5 32 31.5 31 30.5 30 29.5 29 12.5 13 13.5 14 Frequency (GHz) 14.5 15 15.5 Psat P2dB P1dB TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Not Recommended for New Designs. Product Data Sheet TGA1152-SCC TriQuint Recommends the TGA2503-EPU be used for New Designs. MAXIMUM RATINGS SYMBOL V I + PARAMETER 5/ POSITIVE SUPPLY VOLTAGE NEGATIVE SUPPLY VOLTAGE RANGE POSITIVE SUPPLY CURRENT (QUIESCENT) GATE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 8V -5V TO 0V 1.023 A 35.2 mA 21.4 dBm 9.404 W 150 C 320 0C -65 to 150 0C 0 NOTES 4/ 4/ V+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ 3/ 4/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 8.9E+6 to 4.2 E+4 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. THERMAL INFORMATION* Parameter RqJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 7V ID = 682 mA Pdiss = 4.774 W TCH (oC) 125.74 RqJC (C/W) 11.67 TM (HRS) 8.9E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * The thermal information is a result of a detailed thermal model. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Not Recommended for New Designs. Product Data Sheet TGA1152-SCC TriQuint Recommends the TGA2503-EPU be used for New Designs. DC SPECIFICATIONS (100%) (TA = 25 C + 5 C) TEST CONDITIONS 2/ MIN IDSS Gm 1/ 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3| |VBVGD1-3| |VBVGD4| |VBVGS| STD STD STD STD STD STD STD STD Info only Info only 0.5 0.5 0.5 11 11 11 NOTES SYMBOL LIMITS MAX 200 252 1.5 1.5 1.5 30 30 30 mA mS V V V V V V UNITS VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion RF SPECIFICATIONS (TA = 25C + 5C) TEST MEASUREMENT CONDITIONS 7V @ 682mA +/- 5% FREQ = 13.75 - 15 GHz FREQ = 13.75 - 14.5 GHz FREQ = 13.75 - 15 GHz FREQ = 13.75 - 15 GHz FREQ = 14 - 14.5 GHz FREQ = 13.5 - 14.5 GHz IMD3@SCL = P1dB - 10dB OIP3 (P1dB - 10dB) FREQ = 13.5 - 15 GHz FREQ = 13.5 - 15 GHz VALUE MIN 29 31.5 TYP 34 33 -12 -12 +/- 0.25 +/- 1.0 35 39 MAX dB dBm dB dB dB dB dBc dBc UNITS SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT at PIN= +3 dBm INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE GAIN FLATNESS TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Not Recommended for New Designs. Product Data Sheet TriQuint Recommends the TGA2503-EPU be used for New Designs. TGA1152-SCC Over Temperature Measured Performance 6V @ 680mA 33.5 33 32.5 Pout@Pin=1dBm 32 31.5 31 30.5 30 29.5 13 13.5 14 14.5 15 15.5 Frequency (GHz) -40C 25C 70C TGA1152-EPU TGA1152-SCC IMD3 Performance F=14GHz, Vd=7V/680mA, tone separation=10MHz 15 10 5 Mean IMD3 level (dBm) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 10 12 14 16 18 20 22 24 26 28 30 Fundamental output power/tone (dBm) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Not Recommended for New Designs. Product Data Sheet TGA1152-SCC TriQuint Recommends the TGA2503-EPU be used for New Designs. Cu-moly carrier plate (20mil thick) 0.01mF 100pF Vd = +7V Input TFN Output TFN 0.01mF 50W 100pF Notes: 1. 0.1mF capacitors on gate, drain lines not shown but used Vg Recommended Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Not Recommended for New Designs. Product Data Sheet TGA1152-SCC TriQuint Recommends the TGA2503-EPU be used for New Designs. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Not Recommended for New Designs. Product Data Sheet TGA1152-SCC TriQuint Recommends the TGA2503-EPU be used for New Designs. Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 |
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